SI2307CDS features ? halogen-free opti on available ? trenchfet ? power mosfet applications ? load switch for portable devices product summary v ds (v) r ds(on) ( ) i d (a) a, b q g (typ.) - 30 0.088 at v gs = - 10 v - 2.7 4.1 nc 0.138 at v gs = - 4.5 v - 2.2 ordering information: SI2307CDS-t1-e3 (lead (pb)-free) SI2307CDS-t1-ge3 (lead (pb)-free and halogen-free) g to-236 (sot-23) s d top view 2 3 1 * marking code SI2307CDS (n7)* s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. t = 5 s. c. maximum under steady stat e conditions is 166 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a, b t c = 25 c i d - 3.5 a t c = 70 c - 2.8 t a = 25 c - 2.7 a, b t a = 70 c - 2.2 a, b pulsed drain current (10 s pulse width) i dm - 12 continuous source-drain diode current a, b t c = 25 c i s - 1.5 t a = 25 c - 0.91 a, b maximum power dissipation a, b t c = 25 c p d 1.8 w t c = 70 c 1.14 t a = 25 c 1.1 a, b t a = 70 c 0.7 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t 5 s r thja 90 115 c/w maximum junction-to-foot (drain) steady state r thjf 55 70 rohs compliant product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient v ds /t j i d = - 250 a - 32 mv/c v gs(th) temperature coefficient v gs(th) /t j 4.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v gate-source leakage i gss v ds = 0 v, v gs = 20 v - 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 10 v - 6 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 3.5 a 0.073 0.088 v gs = - 4.5 v, i d = - 2.5 a 0.110 0.138 forward transconductance a g fs v ds = - 10 v, i d = - 3.5 a 7s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 340 pf output capacitance c oss 67 reverse transfer capacitance c rss 51 total gate charge q g v ds = - 15 v, v gs = - 4.5 v, i d = - 2.5 a 4.1 6.2 nc gate-source charge q gs 1.3 gate-drain charge q gd 1.8 gate resistance r g f = 1 mhz 10 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 4.5 v, r g = 1 40 60 ns rise time t r 40 60 turn-off delay time t d(off) 20 40 fall time t f 17 30 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v, r g = 1 5.5 10 rise time t r 13 25 turn-off delay time t d(off) 17 30 fall time t f 7.7 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 1.5 a pulse diode forward current i sm - 12 body diode voltage v sd i s = - 0.75 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 2.5 a, di/dt = 100 a/s, t j = 25 c 17 30 ns body diode reverse recovery charge q rr 11 20 nc reverse recovery fall time t a 12 ns reverse recovery rise time t b 5 SI2307CDS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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